WebOct 1, 1994 · Sputter depth profiles indicated that the oxide layer thickness on those band pads, which showed poor gold wire adhesion, was higher than the thickness of the native oxide layer of aluminium. This corrosion was induced by segregation of fluorine into the bulk during storage of the wafers in closed polypropylene boxes. The… View via Publisher WebSep 15, 2004 · The contamination was found to be of the Al (OF)x type, which was initially formed in the CF4/O2 plasma-etching process. On test samples of aluminium …
Fluorine‐Induced corrosion of aluminium microchip bond …
WebJan 1, 2008 · Fluorine corrosion is detrimental to Al pad quality resulting in nonstick on pad (NSOP). In wafer fabrication, NSOP refers to liftoff of Au wire-bond from the surface of Al bondpad due to its... WebFeb 1, 2001 · The contamination was introduced not only by the manufacturing of material materials (such as passivation residual, photoresist residual, fluorine or CF polymers and diffused copper) but also... la saintonnerie
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WebMar 1, 2002 · A lot of wedge bonding failures were observed on the leadframe (LF) type A due to non-stick on lead (NSOL) during the second wire bonding process of TQFP … WebFluorine-containing gases are often used in semiconductor fabs as a strong etchant. Fluorine slightly reacts with Al and forms [AlFx] (x-3)- (e.g. [AlF6]3-) or compounds AlxFyOz on the surface of bonding pads. Those compounds can’t be easily washed away from EKC & DI water cleaning processes. WebWe think that the relatively smaller value of the fluorine count compared with the oxygen taken from the sample can dilute the trace existence of aluminum oxide compounds formed on the percentage value of fluorine, and the evidence of larger counts of oxygen certainly explain the formation of Al(OH) x as a hindrance to wire-bonding. christian hoskins